Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions

• DOI: 10.1038/s41467-018-03930-5
• Publication Date: 2018-04-12T14:31:51Z
• Authors: Lei Chen; Jialin Wen; Peng Zhang; Bingjun Yu; Cheng Chen; Tianbao Ma; Xinchun Lu; Seong H. Kim; Linmao Qian
• Keywords: Nanomanufacturing; Nanoelectronics

Abstract Topographic nanomanufacturing with a depth precision down to atomic dimension is of importance for advancement nanoelectronics new functionalities. Here we demonstrate mask-less and chemical-free nanolithography process regio-specific removal layers on single crystalline silicon surface via shear-induced mechanochemical reactions. Since chemical reactions involve only the topmost layer exposed at interface, possible lattice beneath processed area remains intact without subsurface structural damages. Molecular dynamics simulations depict atom-by-atom process, where first removed preferentially through formation dissociation interfacial bridge bonds. Based parametric thresholds needed removal, critical energy barrier water-assisted Si–Si bonds was determined. The method demonstrated here could be extended nanofabrication other materials.