Probing magnetism in atomically thin semiconducting PtSe2
Magnetism
DOI:
10.1038/s41467-020-18521-6
Publication Date:
2020-09-23T10:03:33Z
AUTHORS (7)
ABSTRACT
Abstract Atomic-scale disorder in two-dimensional transition metal dichalcogenides is often accompanied by local magnetic moments, which can conceivably induce long-range ordering into intrinsically non-magnetic materials. Here, we demonstrate the signature of orderings defective mono- and bi-layer semiconducting PtSe 2 performing magnetoresistance measurements under both lateral vertical measurement configurations. As material thinned down from bi- to mono-layer thickness, observe a ferromagnetic-to-antiferromagnetic crossover, behavior opposite one observed prototypical 2D magnet CrI 3 . Our first-principles calculations, supported aberration-corrected transmission electron microscopy imaging point defects, associate this interplay between defect-induced magnetism interlayer interactions Furthermore, show that graphene be effectively used probe magnetization adjacent findings an ultimately scaled monolayer system lay foundation for atom-by-atom engineering otherwise
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