2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

• DOI: 10.1038/s41467-025-57773-y
• Publication Date: 2025-03-16T06:01:52Z
• Authors: Xiulian Fan; Jiali Yi; Bin Deng; Cong Zhou; Zejuan Zhang; Jia Yu; Weihan Li; Cheng Li; Guangcheng Wu; Xilong Zhou; Tulai Sun; Yihan Zhu; Jian Zhou; Juan Xia; Zenghui Wang; Keji Lai; Zheng Peng; Dong Li; Anlian Pan; Yu Zhou

The experimental realization of single-crystalline high-κ dielectrics beyond two-dimensional (2D) layered materials is highly desirable for nanoscale field-effect transistors (FETs). However, the scalable synthesis 2D nonlayered insulators currently limited by uncontrolled isotropic three-dimensional growth, hampering achievement simultaneous high dielectric constants and low trap densities small film thicknesses. Herein, we show a edge-seeded heteroepitaxial strategy to synthesize ultrathin CaNb2O6 nanosheets chemical vapor deposition, exhibiting high-crystalline quality, thickness-independent constant (~ 16) breakdown field strength up ~ 12 MV cm−1. MoS2/CaNb2O6 FETs exhibit an on/off ratio over 107, subthreshold swing down 61 mV/dec negligible hysteresis. This work suggests universal heteroepitaxy slow kinetic growth demonstrates as promising facilitating electronic applications. remain sought-after future development electronics. Here, authors report thin films with equivalent oxide thickness 0.7 nm their application high-performance MoS2 transistors.