Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing

• DOI: 10.1038/s41699-019-0110-x
• Publication Date: 2019-07-30T10:03:13Z
• Authors: Jianfeng Jiang; Jingxin Li; Yutao Li; Jiazhzhi Duan; Linshen Li; Ye Tian; Zhihua Zong; Haotian Zheng; Xianjin Feng; Qiqiang Li; Hong Liu; Yu Zhang; Tian-Ling Ren; Lin Han
• Keywords: Electron Mobility; Subthreshold slope; Field effect

Abstract Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because its high electron mobility and stable material properties. Some work has been performed to improve InSe FETs. However, practical applications, electrical stability FETs another essential factor guarantee performance electronic system. Here, we show a highly FET 1200 cm 2 /V·s working regime. The bottom-gate staggered was fabricated polymethyl methacrylate (PMMA)/HfO dual-layer gate dielectric PMMA back-channel encapsulation. hysteresis maintained at 0.4 V after 30 days storage under normal ambient conditions, threshold voltage shift retained 0.6 stress GS 10 V, which represents best reported date. Its enable reliable detection weak nerve action potential low power consumption. High-performance expand their applications flexible situ real-time intelligent recording.