Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

• DOI: 10.1038/s41928-024-01233-w
• Publication Date: 2024-08-26T10:02:23Z
• Authors: Yaqing Shen; Kaichen Zhu; Yiping Xiao; Dominic Waldhör; Abdulrahman H. Ba...; Theresia Knobloch; Sebastian Pazos; Xianhu Liang; Wenwen Zheng; Yue Yuan; Juan B. Roldan; Udo Schwingenschlögl; He Tian; Huaqiang Wu; Thomas F. Schrang...; Nicholas Trainor; Joan M. Redwing; Saptarshi Das; Tibor Grasser; Mario Lanza
• Keywords: Hexagonal boron nitride