Negative capacitance from the inductance of ferroelectric switching

• DOI: 10.1038/s42005-019-0120-1
• Publication Date: 2019-03-21T11:12:55Z
• Authors: Po-Hsien Cheng; Yu-Tung Yin; I-Na Tsai; Chen-Hsuan Lu; Lain-Jong Li; Samuel C. Pan; Jay Shieh; Makoto Shiojiri; Miin-Jang Chen
• Keywords: Ferroelectric capacitor; LCR meter; Switching time

Abstract Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC inductance induced by polarization switching, based on an as-deposited nanoscale zirconium oxide (ZrO 2 ) layer (nano- f -ZrO ). The results are demonstrated nano- , including resistor–inductor–capacitor oscillations, positive reactance Nyquist impedance plot, enhancement of capacitance, sub-60 mV/dec subthreshold swing transistors. analysis shows that switching yields effective electromotive force which is similar behavior Lenz’s law, leading inductive responses. Nano-beam electron diffraction reveals multi-domains . Under small-signal operation, the net variation contributes NC. Nano- provides a pronounced compared conventional inductors, would have impacts variety applications transistors, filters, oscillators, radio-frequency-integrated circuits.