Solar-Blind Photodetectors for Harsh Electronics

• DOI: 10.1038/srep02628
• Publication Date: 2013-09-11T09:12:24Z
• Authors: Dung-Sheng Tsai; Wei-Cheng Lien; Der-Hsien Lien; Kuan-Ming Chen; Meng-Lin Tsai; Debbie G. Senesky; Yueh-Chung Yu; Albert P. Pisano; Jr-Hau He
• Keywords: Ultraviolet; Radiation hardening

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the PDs Si show dark current as low ~ 1 nA. The working is up to 300°C 10(13) cm(-2) of 2-MeV proton fluences for metal-semiconductor-metal (MSM) PDs. Moreover, photoresponse time fast 110 ms (the rise time) 80 fall 5 bias. results that MSM hold high potential in next-generation deep ultraviolet use harsh environments.