Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong

• DOI: 10.1038/srep14618
• Publication Date: 2015-10-06T10:50:52Z
• Authors: An Quan Jiang; Xiang Jian Meng; David Wei Zhang; Min Hyuk Park; Sijung Yoo; Yu Jin Kim; James F. Scott; Cheol Seong Hwang
• Keywords: Lead zirconate titanate

Abstract The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than their bulk. Here, we discover a way increasing constants by ca. 500% synchronizing the pulsed switching fields with intrinsic time (nucleation domain plus forward growth from cathode to anode). In 170-nm lead zirconate titanate film an average grain size 850 nm this produces constant 8200 maximum nucleus density 3.8 μm −2 , which one three higher other films. This permits capacitors memory devices and step making domain-engineered nano-electronics.