Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization

• DOI: 10.1038/srep20218
• Publication Date: 2016-02-08T10:14:13Z
• Authors: Tao Tao; Ting Zhi; Bin Liu; Mingxue Li; Zhe Zhuang; Jiangping Dai; Yi Li; Fulong Jiang; Wenjun Luo; Zili Xie; Dunjun Chen; Peng Chen; Zhaosheng Li; Zhigang Zou; Rong Zhang; Youdou Zheng
• Keywords: Photocurrent; Nanorod; Quantum Efficiency

Abstract The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based have been fabricated by a soft UV-curing nano-imprint lithography and top-down etching technique, which improve the incident photon (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, turn-on voltage is reduced low −0.6 V, indicates possibility of achieving self-driven. Furthermore, SiO 2 /Si 3 N 4 dielectric distributed Bragg reflectors employed further IPCE up 60%. And photocurrent 1.1 V) enhanced 0.37 mA/cm (original planar 1.5 . These improvements may accelerate possible applications generation energy-efficiency.