Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal–insulator transition

• DOI: 10.1038/srep21836
• Publication Date: 2016-02-26T11:32:32Z
• Authors: M. S. Osofsky; C. M. Krowne; K. M. Charipar; K. Bussmann; C. N. Chervin; I. R. Pala; D. R. Rolison
• Keywords: Metal–insulator transition

Abstract The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors and conducting interfaces ( e.g. , LaAlO 3 /SrTiO ) has stimulated research into nature electronic transport in two-dimensional given that seminal theory for disordered metals predicts state cannot exist two dimensions (2D). In this report, we demonstrate existence a metal–insulator transition (MIT) highly RuO 2 nanoskins with carrier concentrations are one-to-six orders magnitude higher mobilities lower than those reported previously 2D oxides. presence an MIT accompanying atypical characteristics place form diffusive, strong disorder regime establishes is analogous to three-dimensional case.