High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

• DOI: 10.1038/srep29747
• Publication Date: 2016-07-14T11:40:39Z
• Authors: M. M. Muhammed; M. A. Roldan; Y. Yamashita; S.-L. Sahonta; I. A. Ajia; K. Iizuka; A. Kuramata; C. J. Humphreys; I. S. Roqan
• Keywords: Buffer (optical fiber)

Abstract We demonstrate the high structural and optical properties of In x Ga 1−x N epilayers (0 ≤ 23) grown on conductive transparent ("Equation missing"<!-- image only, no MathML or LaTex -->01)-oriented β-Ga 2 O 3 substrates using a low-temperature GaN buffer layer rather than AlN layer, which enhances quality stability crystals compared to those (100)-oriented . Raman maps show that 2″ wafer is relaxed uniform. Transmission electron microscopy (TEM) reveals dislocation density reduces considerably (~4.8 × 10 7 cm −2 ) at grain centers. High-resolution TEM analysis demonstrates most dislocations emerge an angle with respect c -axis, whereas opposite phase form loop annihilate each other. The behavior due irregular -->01) surface interface distorted followed by epilayer. Photoluminescence results confirm time-resolved spectroscopy shows recombination governed bound excitons. find low root-mean-square average (≤1.5 nm) can be achieved epilayers. reveal substrate has strong potential for use in large-scale high-quality vertical light emitting device design.