Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

• DOI: 10.1038/srep30554
• Publication Date: 2016-08-01T09:38:20Z
• Authors: Sung Heo; JaeGwan Chung; Hyung-Ik Lee; Junho Lee; Jong-Bong Park; Eunae Cho; KiHong Kim; Seong Heon Kim; Gyeong Su Park; Dongho Lee; Jaehan Lee; Junggyu Nam; JungYup Yang; Dongwha Lee; Hoon Young Cho; Hee Jae Kang; Pyung-Ho Choi; Byoung-Deog Choi
• Keywords: Deep-level transient spectroscopy; Penning trap; Auger electron spectroscopy

Abstract Defect depth profiles of Cu (In 1−x ,Ga x )(Se 1−y S y ) 2 (CIGSS) were measured as functions pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects observed, i.e., electron traps ~0.2 eV at 140 K (E1 trap) 0.47 300 (E2 hole ~0.1 100 (H1 ~0.4 250 (H2 trap). The open circuit (V OC deteriorated when the trap densities E2 increased. energy band diagrams CIGSS also obtained using Auger (AES), X-ray photoelectron (XPS), DLTS data. These results showed that valence was lowered higher content. In addition, it found defect influenced V could be interpreted an extended defect. profile images provided clear insight into identification state density a function around space charge region.