Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature

• DOI: 10.1038/srep37429
• Publication Date: 2016-11-21T10:18:46Z
• Authors: Margo Staruch; Daniel B. Gopman; Yury L. Iunin; Robert D. Shull; Shu Fan Cheng; Konrad Bussmann; Peter Finkel
• Keywords: Strain (injury)

Abstract The ability to tune both magnetic and electric properties in magnetoelectric (ME) composite heterostructures is crucial for multiple transduction applications including energy harvesting or field sensing, other devices. While large ME coupling achieved through interfacial strain-induced rotation of anisotropy magnetostrictive/piezoelectric multiferroic has been demonstrated, there are presently certain restrictions achieving a full control magnetism an extensive operational dynamic range, limiting practical realization this effect. Here, we demonstrate the possibility generating substantial reversible changes induced strains driven by applied fields magnetostrictive thin films deposited on (0 1 1)-oriented domain-engineered ternary relaxor ferroelectric single crystals with extended temperature voltage ranges as compared binary relaxors. We show, combination angular magnetization magneto-optical domain imaging measurements, that 90° in-plane propagation domains low under zero bias realized. To our knowledge, present value attained converse coefficient highest linear piezoelectric regime expected be stable wide thus representing step towards