Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

• DOI: 10.1038/srep42368
• Publication Date: 2017-02-20T10:25:27Z
• Authors: Hiroshi Kawarada; Tetsuya Yamada; Dechen Xu; Hidetoshi Tsuboi; Yuya Kitabayashi; Daisuke Matsumura; Masanobu Shibata; Takuya Kudo; Masafumi Inaba; Atsushi Hiraiwa
• Keywords: Passivation

Abstract Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and losses, but also enable a smart inverter system by dramatic simplification external circuits. However, p-channel FETs equivalent performance to those n-channel are obtained in any material other than diamond. Here we show that breakdown voltage more 1600 V has been diamond metal-oxide-semiconductor (MOS) FET two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces 2DHG ubiquitously hydrogen-terminated (C-H) surface acts as both gate insulator passivation layer. The high is state-of-the-art SiC planar AlGaN/GaN FETs. drain current density on-state comparable these two similar device size B .