Solution-processed oxide semiconductor SnO in p-channel thin-film transistors

• DOI: 10.1039/c2jm16426d
• Publication Date: 2012-01-31T13:00:28Z
• Authors: Koshi Okamura; Babak Nasr; Richard A. Brand; Horst Hahn
• Keywords: Tin oxide; Spin Coating; Monoxide; Solution process

A p-type inorganic oxide semiconductor, tin monoxide (SnO), is developed by a solution process. SnO thin-film transistors (TFTs) in the p-channel enhancement mode are fabricated spin-coating precursor followed postannealing, showing highest field-effect mobility of 0.13 cm2 V−1 s−1, threshold voltage −1.9 V, and on/off drain current ratio 85.