Highly entangled K0.5V2O5 superlong nanobelt membranes for flexible nonvolatile memory devices

• DOI: 10.1039/c2jm34031c
• Publication Date: 2012-07-28T06:56:04Z
• Authors: Kun Xu; Shuanglin Hu; Changzheng Wu; Chenwen Lin; Xiuli Lu; Lele Peng; Jinlong Yang; Yi Xie
• Keywords: Non-Volatile Memory; Hysteresis

Flexible electronics has been an intensively pursued hot topic in recent years, and flexible nonvolatile memory devices (NVMs) are also important concept modern due to the advantages of retaining stored information even when not powered, with great portability high deformability. In this study, we report that δ-K0.5V2O5 bronze sandwiched potassium atoms V–O framework found be a new promising material platform for intriguing applications. The structure alkali metal between two V2O5 layers ensures NVM effect by changing electronic properties under applied electric field. entangled superlong nanobelt networks, which established via "solid–solution–solid" (SSS) mechanism hydrogen-bond-assisted entangling process, bring synergic excellent mechanical electrical properties. Spin polarized GGA+U density functional theory calculations elucidate well nature bronze-based NVM, overall applying field is reduce energy gap, no matter what direction is; effects ion shift would follow same trend, non-linear band gap changes lead resistance material. NVMs based on membrane possess only low cost very simple device structure, but reversible noticeable nonlinear hysteresis, consumption, stable WRER cycles, long retention time over 1000 s, showing promise next-generation NVMs.