Thickness-dependent Schottky barrier height of MoS2field-effect transistors

• DOI: 10.1039/c7nr01501a
• Publication Date: 2017-04-12T15:23:54Z
• Authors: Junyoung Kwon; Jong-Young Lee; Young-Jun Yu; Chul-Ho Lee; Xu Cui; James Hone; Gwan-Hyoung Lee
• Keywords: 02 engineering and technology; 0210 nano-technology

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.