Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

• DOI: 10.1039/c7nr03495d
• Publication Date: 2017-06-22T03:33:46Z
• Authors: Hisao Nakamura; Ivan Rungger; Stefano Sanvito; Nobuki Inoue; Junji Tominaga; Yoshihiro Asai
• Keywords: Phase-change memory; Phase-change material; Resistive touchscreen

A theoretical study of an interfacial phase change memory made a GeTe–Sb₂Te₃ superlattice with W electrodes is presented to identify the high and low resistance states switching mechanism.