Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition
Deposition
DOI:
10.1039/c7ra04162d
Publication Date:
2017-06-30T08:13:42Z
AUTHORS (5)
ABSTRACT
We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture C<sub>2</sub>H<sub>2</sub>, NH<sub>3</sub>, H<sub>2</sub> at temperature 700–750 °C.
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