Electroluminescence in a rectifying graphene/InGaN junction

• DOI: 10.1039/c7ra10672f
• Publication Date: 2017-11-01T09:12:41Z
• Authors: Hak Dong Cho; Im Taek Yoon; Sh. U. Yuldashev; Tae Won Kang; Deuk Young Kim; Jong-Kwon Lee
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

A graphene-InGaN Schottky junction has been successfully fabricated by transferring graphene layers onto n-type In_0.23Ga_0.77N/GaN/Al₂O₃ substrates.