Insertion of an ultrathin Al2O3interfacial layer for Schottky barrier height reduction in WS2field-effect transistors

• DOI: 10.1039/c8nr07812b
• Publication Date: 2019-02-13T16:53:47Z
• Authors: Shan Zheng; Haichang Lu; Huan Liu; Dameng Liu; John Robertson
• Keywords: Barrier layer

We report an effective approach for reducing the Schottky barrier height (SBH) in source and drain (S/D) contacts of WS₂field-effect transistors (FETs) using ultrathin Al₂O₃interfacial layer between metal WS₂.