Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates
02 engineering and technology
0210 nano-technology
DOI:
10.1039/c9nr09129g
Publication Date:
2019-12-20T08:43:31Z
AUTHORS (14)
ABSTRACT
High quality monolayer MoS<sub>2</sub> with greatly improved optical and electrical performances can be directly grown by pretreating the growth SiO<sub>2</sub>/Si substrates sulfur vapor.
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