Gate-tunable high magnetoresistance in monolayer Fe3GeTe2 spin valves

• DOI: 10.1039/d0cp03761c
• Publication Date: 2020-10-08T10:25:00Z
• Authors: Jie Yang; Ruge Quhe; Shiqi Liu; Yuxuan Peng; Xiaotian Sun; Liang Zha; Baochun Wu; Bowen Shi; Chen Yang; Junjie Shi; Guang Tian; Changsheng Wang; Jing Lu; Jinbo Yang
• Keywords: Spin valve

Here we design a monolayer Fe₃GeTe₂ spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased 450 510% after the gates are introduced.