Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

• DOI: 10.1039/d0ra02265a
• Publication Date: 2020-04-22T10:56:19Z
• Authors: Peipei Xu; Jiakun Liang; Hong Li; Fengbin Liu; Jun Tie; Zhiwei Jiao; Jing Luo; Jing Lu
• Keywords: Chemistry; 0103 physical sciences; 01 natural sciences; 7. Clean energy

The ML GeSe and GeTe NCTFETs fulfill the ITRS low power and high performance devices, respectively, at the “4/3” node range.