The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

• DOI: 10.1039/d0tc00909a
• Publication Date: 2020-05-18T08:23:43Z
• Authors: Emilio Scalise; Luca Barbisan; Andrey Sarikov; Francesco Montalenti; Leo Miglio; Anna Marzegalli
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 02 engineering and technology; Computational Physics (physics.comp-ph); 0210 nano-technology; SiC, defects, power electronics, atomistic modelling; Physics - Computational Physics

Dislocation complexes are identified as killer defects in 3C-SiC/Si(001) by a synergistic approach of molecular dynamics and ab initio simulations.