A promising Si–Cr–Nd–C solution system designed for rapid growth of 3C-SiC at a low temperature of 1873 K
DOI:
10.1039/d4ce01287a
Publication Date:
2025-03-05T07:41:11Z
AUTHORS (6)
ABSTRACT
A new Si–Cr–Nd–C solution was proposed for the rapid growth of 3C-SiC crystals at a low temperature of 1873 K.
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