Gate substrate effect on RF CMOS device noise

• DOI: 10.1049/el:20072255
• Publication Date: 2007-11-27T17:21:05Z
• Authors: Y.-Z. Xiong; J. Shi; N. Lan; F. Lin
• Keywords: 0103 physical sciences; 01 natural sciences

The gate substrate effect on RF CMOS device noise is investigated. resistance (Rgb) contribution to the total minimum figures (NFmin) obtained. results show that considerable in a certain frequency range for 90 nm devices.