800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor

• DOI: 10.1049/el.2012.0685
• Publication Date: 2012-04-25T00:42:08Z
• Authors: L. Liu; X. Zou; W.L. Goh; R. Ramamoorthy; G. Dawe; M. Je
• Keywords: :Engineering::Electrical and electronic engineering [DRNTU]; 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology; DRNTU::Engineering::Electrical and electronic engineering; 620

Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number electrodes. The interface IC is one essential blocks to capture weak signals. Presented an energy-efficient amplifier with enhanced noise efficiency factor (NEF) systems. Based on conventional capacitive feedback pseudo-resistor structure, fully differential employs current-reuse technique achieve low high current efficiency, consuming 800 nA at 1 V power supply. measured thermal floor 43nV/√Hz input-referred 5.71 µVrms when integrated Hz 50 kHz, leading NEF 2.59. entire has been fabricated using 0.18 µm CMOS technology, occupying area 0.05 mm2.