Butterfly packaged high‐speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

• DOI: 10.1049/el.2012.4335
• Publication Date: 2013-02-15T18:04:06Z
• Authors: H. Yang; N. Ye; R. Phelan; J. O'Carroll; B. Kelly; W. Han; X. Wang; N. Nudds; N. MacSuibhne; F. Gunning; P. O'Brien; F.H. Peters; B. Corbett
• Keywords: Photodiode; Leakage (economics); Quantum Efficiency; Biasing; Indium gallium arsenide

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low 120nA −3V bias voltage and responsivity of around 0.3A/W 2000nm. butterfly packaging the presented which 3dB bandwidth more than 10GHz. similar performance 1550nm.