Magnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer

• DOI: 10.1049/el.2016.2216
• Publication Date: 2016-08-18T09:10:02Z
• Authors: I. Nevinskas; K. Vizbaras; A. Vizbaras; A. Trinkūnas; A. Krotkus
• Keywords: 02 engineering and technology; 0210 nano-technology

An undoped GaSb epitaxial layer has been grown on a GaAs substrate by molecular beam epitaxy. It found that could be potential surface terahertz (THz) emitter photoexcited 1.55 μm femtosecond laser pulses since the maximum optical-to-THz power conversion efficiency is at around this wavelength. The THz field strength 10 dB weaker as compared with generated from narrow-gap InAs these energies of quanta. Furthermore, samples were exposed to constant magnetic which enhances emission and allows signal registration in line-of-sight geometry.