2.4 GHz Class-E power amplifier with transmission-line harmonic terminations

• DOI: 10.1049/iet-map:20060133
• Publication Date: 2007-04-23T14:13:26Z
• Authors: T. Mury; V.F. Fusco; H. Cantu
• Keywords: Harmonic; Power-added efficiency; Linear amplifier; MESFET; Direct-coupled amplifier; Frequency-shift keying

The design procedure, fabrication and measurement of a Class-E power amplifier with excellent second- third-harmonic suppression levels are presented. A simplified technique offering compact physical layout is proposed. With 1.2 mm gate-width GaAs MESFET as switching device, the capable delivering 19.2 dBm output at 2.41 GHz, achieves peak PAE 60% drain efficiency 69%, exhibits 9 dB gain when operated from 3 V DC supply voltage. When compared to classical two-harmonic termination amplifier, employing three-harmonic terminations has more than 10% higher 23 better level. Experimental results presented good agreement simulation obtained. Further, verify practical implementation in communication systems, Bluetooth-standard GFSK modulated signal applied both two- amplifiers. measured RMS FSK deviation error magnitude were, for case, 1.01 kHz 0.122%, respectively, and, 1.09 0.133%.