Passive photonic components using InP optical wire technology

• DOI: 10.1049/iet-opt:20060104
• Publication Date: 2008-04-03T22:46:56Z
• Authors: M. Lesecq; S. Maricot; J.-P. Vilcot; M. Beaugeois
• Keywords: Nanophotonics; Beam propagation method; Plasma Etching

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These are straight curved waveguides as well Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions this implicitly targeted in different parts process work. First, propagation excess losses because a bend or Y-junction modelled beam method finite difference time domain method. Then, technological used fabricate these presented; it mainly based on e-beam direct writing inductively coupled plasma deep etching. Finally, measured results compared with theory. demonstrate, thus, that submicron (or wire) can lead very compact since small radius bends wide angle Y-junctions showed almost low loss.