Improving the sidewall quality of nanosecond laser-drilled deep through-silicon vias by incorporating a wet chemical etching process

• DOI: 10.1049/mnl.2012.0303
• Publication Date: 2012-07-25T22:38:30Z
• Authors: Chao-Wei Tang; Kuan-Ming Li; Hong-Tsu Young
• Keywords: Through-Silicon Via; Laser drilling; Nanosecond; Nanometre; Isotropic etching

Through-silicon vias (TSVs) are thought to be the essential process of next-generation packaging technologies such as three-dimensional integrated circuit, system in package and wafer-level packaging. This Letter investigated formation quality deep TSVs using green nanosecond laser drilling process. Moreover, a wet chemical etching (WCE) was employed improve sidewall fabricated ns pulses. Experimental results show that TSV roughness can markedly reduced, from micrometre nanometre scale. The proposed method would enable semiconductor manufactures use for industrial fabrication desired achieved by incorporating WCE process, which is suitable mass production.