THE TEMPERATURE CHARACTERISTICS OF THE PHOTOLUMINESCENCE FROM GaAs-GaAlAs MULTIPLE QUANTUM WELL STRUCTURES

• DOI: 10.1051/jphyscol:1987524
• Publication Date: 2007-08-14T06:24:43Z
• Authors: W. K. GE; Z. Y. XU; Y. YAN; J. Z. ZU; Z. B. ZHENG; D. Z. SUN

The temperature behavior of the photoluminescence from GaAs-GaAlAs multiple quantum well structures indicates that the maintaining of the excitonic properties of the luminescence at higher temperature is a good assessment of the material quality, and the temperature dependence of the luminescence intensity ratio from the intentionally arranged wide and narrow wells is discussed by the vertical transport process of the photoexcited electrons.