Modeling of a GaN-based light-emitting diode for uniform current spreading

• DOI: 10.1063/1.1311819
• Publication Date: 2002-07-26T13:43:09Z
• Authors: Hyunsoo Kim; Ji-Myon Lee; Chul Huh; Sang-Woo Kim; Dong-Joon Kim; Seong-Ju Park; Hyunsang Hwang
• Keywords: Wide-bandgap semiconductor

The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from view point uniform current spreading. By means simple modeling, it was found that density and length lateral path through transparent layer represent dominant parameters in determining In this regard, we studied effect on reliability LED. We were able to significantly improve electrical, optical, LED terms reducing layer.