Monte Carlo simulation of the generation of terahertz radiation in GaN

• DOI: 10.1063/1.1334924
• Publication Date: 2002-07-26T14:13:37Z
• Authors: E. Starikov; P. Shiktorov; V. Gružinskis; L. Reggiani; L. Varani; J. C. Vaissière; Jian H. Zhao
• Keywords: Wurtzite crystal structure; Wide-bandgap semiconductor

The conditions for microwave power generation at low temperatures under optical phonon emission are analyzed by Monte Carlo simulations of both small- and large-signal responses in bulk zinc blende wurtzite GaN. As a result the high energy strong interaction electrons with phonons GaN general improvement on transit-time resonance considerable increase maximum frequency can be achieved comparison to widely studied III–V materials such as GaAs InP. A dynamic negative differential mobility caused occurs wide range about 0.05–3 THz persists up liquid nitrogen temperature doping levels 5×1016 cm−3. efficiency amplification is found depend nonmonotonously static electric field amplitudes, frequency, level so that each there exists an optimal parameter values. Under 1% 2% 0.5–1.5 range.