Organic-metal-semiconductor transistor with high gain

• DOI: 10.1063/1.1751218
• Publication Date: 2004-05-06T22:24:06Z
• Authors: M. S. Meruvia; I. A. Hümmelgen; M. L. Sartorelli; A. A. Pasa; W. Schwarzacher
• Keywords: Base (topology); Heterostructure-emitter bipolar transistor

We use evaporated C60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome barrier is measured at least 0.99. Our metal-base easy to fabricate it does not involve wafer bonding or require perfect semiconductor-on-metal growth.