Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching

• DOI: 10.1063/1.1829167
• Publication Date: 2004-12-01T23:46:34Z
• Authors: E. D. Haberer; R. Sharma; C. Meier; A. R. Stonas; S. Nakamura; S. P. DenBaars; E. L. Hu
• Keywords: Wide-bandgap semiconductor

GaN-based, mushroom-shaped microdisk lasers were fabricated using band-gap selective photoelectrochemical etching. The optically pumped microdisks had well-defined, distinct modes at excitation powers ranging from about 8to16W∕cm2. Modal linewidths of 0.09nm reported, which was near the resolution measurement equipment. Quality factors for >4600. observed lasing threshold 12.1W∕cm2. At higher powers, heating effects and degradation in optical response microdisks.