Pseudo-metal-base transistor with high gain

• DOI: 10.1063/1.1952569
• Publication Date: 2005-06-21T22:23:45Z
• Authors: Michelle S. Meruvia; Adriano R. V. Ben...; Ivo A. Hümmelgen; André A. Pasa; Walther Schwarzacher
• Keywords: Base (topology); Base metal; Heterostructure-emitter bipolar transistor; Static induction transistor

We use evaporated C60 fullerene as emitter, a conducting polymer blend base, and Si collector in vertical transistor structure similar to metal-base transistor. The used base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). measured common-base current gain of our pseudo-metal-base (p-MBT) close 1.0. p-MBT straightforward fabricate compatible with conventional Si-based electronics.