Highest conductivity oxide SrMoO3 grown by a floating-zone method under ultralow oxygen partial pressure

• DOI: 10.1063/1.1992671
• Publication Date: 2005-07-08T00:33:04Z
• Authors: Ichiro Nagai; Naoki Shirakawa; Shin-ichi Ikeda; Ryusuke Iwasaki; Hiroshi Nishimura; Masashi Kosaka
• Keywords: Partial pressure

Single crystals of a highly conductive oxide SrMoO3 have been grown by floating-zone method under argon atmosphere with ultralow oxygen partial pressure p(O2)∼10−25atm. The obtained single reveal quite low resistivity at 300 K ρ(300K)=5.1μΩcm, which is the lowest to date in values ρ(300K) all oxides. Resistivity and specific heat data suggest that electrons behave as Fermi liquid (correlated electron), its due extremely small electron-phonon interaction SrMoO3.