Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition

• DOI: 10.1063/1.2356075
• Publication Date: 2006-09-19T22:17:04Z
• Authors: J.-H. Park; S.-J. Jang; S.-S. Kim; B.-T. Lee
• Keywords: Deposition

Zinc oxide thin films were grown on sapphire substrates by metal organic chemical vapor deposition technique. Single crystal with flat and smooth surfaces reproducibly obtained, application of sample bias O2 inductively coupled plasma (ICP). At the growth condition 650°C, 400W ICP power, −94V voltage O∕Zn ratio 75, full width at half maximum values room temperature photoluminescence high-resolution x-ray diffraction measured to be 126meV 269arcsec, respectively. It was proposed that provided reactant ions kinetic energy, which promoted formation single crystalline films.