Tailoring the hole concentration in superlattices based on nitride alloys

• DOI: 10.1063/1.3148244
• Publication Date: 2009-06-01T23:23:37Z
• Authors: Qing-Hong Zheng; Yi-An Yin; Li-Hong Zhu; Jin Huang; Xiao-Ying Li; Bao-Lin Liu
• Keywords: Ohmic contact; Wide-bandgap semiconductor; Oscillation (cell signaling)

By introducing Mg-doped InGaN/AlGaN strained-layer superlattice (SL) as p-type layer, the performance of Ohmic contact is improved compared with AlGaN/GaN and InGaN/GaN SLs. SL yields higher hole concentration due to larger oscillation valence band edge smaller activation energy. The calculated average in shows a twofold increase that at same level. measured sheet density for ten periods high 4.4×1014 cm−2. Finally, Ni/Au contacts on specific resistance 7.3×10−5 Ω cm2 are realized.