Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models

• DOI: 10.1063/1.351611
• Publication Date: 2002-07-26T13:45:29Z
• Authors: M. Fried; T. Lohner; E. Jároli; N. Q. Khanh; C. Hajdu; J. Gyulai
• Keywords: Ellipsometry; Rutherford backscattering spectrometry

Several-parameter fitting of multiple-angle-of-incidence ellipsometry data is developed to characterize near-surface layers on semiconductors damaged by implantation. The damage depth profiles were described either rectangular, trapezoid-type, or coupled half-Gaussian (realistic) optical models. rectangular model has three parameters: the average level and effective thickness implanted layer, plus native oxide. trapezoid-type enhanced with a fourth parameter, width back (a/c) interface. realistic consists stack fixed equal thicknesses levels determined profile function (presently half-Gaussians). Five parameters used: center, height, two standard deviations profile, complex refractive index each layer calculated from actual Bruggeman medium approximation. method was tested Ge-implanted silicon (at wavelength 632.8 nm) cross checked high resolution Rutherford backscattering spectrometry channeling.