Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused-ion-beam implantation

• DOI: 10.1063/1.351870
• Publication Date: 2002-07-26T13:15:15Z
• Authors: L. B. Allard; G. C. Aers; S. Charbonneau; T. E. Jackman; R. L. Williams; I. M. Templeton; M. Buchanan; D. Stevanovic; F. J. D. Almeida
• Keywords: 0103 physical sciences; 01 natural sciences

Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism derived indium concentration and degree interdiffusion QWs from observed shifts PL transition energies. study nanostructures indicated that lateral extent significantly larger than predicted spreading ion beam.