Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators

• DOI: 10.1063/1.3610513
• Publication Date: 2011-08-01T13:23:44Z
• Authors: A. Vorobiev; J. Berge; S. Gevorgian; M. Löffler; E. Olsson
• Keywords: 02 engineering and technology; 0210 nano-technology

Tunable 5.2 GHz bulk acoustic wave resonators utilizing BaxSr1−xTiO3 ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO2−x in the Pt layer.