Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers

• DOI: 10.1063/1.3673346
• Publication Date: 2012-01-04T02:19:30Z
• Authors: T. Wang; H. Wu; C. Chen; C. Liu
• Keywords: 02 engineering and technology; 0210 nano-technology

Nonploar m-plane ZnO films were grown on p-Si (111) substrates by using atomic layer deposition. X-ray diffraction and high resolution tunneling electron microscopy measurements showed that the ZnO films were 〈101¯0〉 oriented, and the crystalline quality of ZnO films was improved with an Al2O3 buffer layer, which significantly enhances the photoluminescence and reduces the reverse leakage current of ZnO/Si heterojuction.