Magnetic properties of very thin single and multilayer NiFeCo and CoFe films deposited by sputtering

• DOI: 10.1063/1.367724
• Publication Date: 2002-07-26T13:53:21Z
• Authors: D. Wang; J. M. Daughton; K. Bussmann; G. A. Prinz
• Keywords: 02 engineering and technology; 0210 nano-technology

As the size of giant magneto resistive (GMR) devices continues to decrease into submicrometer regime, demagnetizing field from magnetic layers will increase very high values, prohibiting switching with a reasonably small current. The most feasible way reduce it is make thinner. Single NiFeCo and CoFe films as well multilayers consisting these various underlayers have been deposited by rf diode sputtering in field. becomes nonmagnetic at 15, 10, 6 Å when using Ta, Si3N4, Cu underlayers, respectively. magnetization sandwiched decreases become thinner, indicating that about one atomic layer loses its moment each interface Cu. induced anisotropy strong function film thickness, changing 7 Oe for 20 17 100 Å. lose little interfaces Multilayers [NiFeCo/Cu/CoFe/Cu] different underlayer thickness made GMR properties show dependence on buffer due roughnesses. With proper designing interfaces, thin potential ultrahigh-density memory other applications.