Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

• DOI: 10.1063/1.4921640
• Publication Date: 2015-05-22T17:00:23Z
• Authors: J. A. Mol; J. Salfi; R. Rahman; Y. Hsueh; J. A. Miwa; G. Klimeck; M. Y. Simmons; S. Rogge
• Keywords: Acceptor; Energy level splitting; Degeneracy (biology)

The energy spectrum of spin-orbit coupled states individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type broken degeneracy has recently argued be advantageous for lifetime acceptor-based qubits [Phys. Rev. B 88 064308 (2013)]. depth dependent splitting between doublets is consistent with tight binding calculations, excess 1 meV all acceptors within experimentally accessible range (< 2 nm from surface). These results will aid development tunable long coherence times possibility electrical manipulation.