Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

• DOI: 10.1063/1.4921824
• Publication Date: 2015-06-02T17:17:24Z
• Authors: Atsushi Hiraiwa; Tatsuya Saito; Daisuke Matsumura; Hiroshi Kawarada
• Keywords: Passivation; Kinetic isotope effect

The Al2O3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H2O oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) specific to hydrogen-terminated diamond surface, leading successful operation of SC field-effect transistors 400 °C. In order investigate this excellent passivation effect, we carried out isotope analysis D2O instead in ALD found that conventional (100 incorporates 50 times more CH3 groups than high-temperature film. This is supposed dissociate from when heated afterwards higher (550 causes peeling patterns on H-terminated surface. free problem has largest mass density dielectric constant among those investigated study. also unveiled relatively active H-exchange reaction between H-termination during ALD, still being kept intact. dynamic yet steady H termination realized by suppressed oxidation due endothermic H2O. Additionally, not only observed kinetic effect form reduced growth rate D2O-oxidant but D2O-grown films are smaller H2O-grown films. new type which caused presence isotopes unlike traditional effects originate itself. Hence, very effective forming and/or gate-insulation high-temperature-operation devices, knowledge aforementioned will be basis for further enhancing technologies general.