Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy

• DOI: 10.1063/1.4926413
• Publication Date: 2015-07-08T17:00:18Z
• Authors: Arpan De; Malleswararao Tangi; S. M. Shivaprasad
• Keywords: Nanorod

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role pre-nitridation Si(111) substrate and growth, temperature on morphology, structural optical properties InxGa1−xN films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment surface nitridation results in formation vertically well-aligned single crystalline that are coalesced isolated at 400 °C 500 °C, respectively. In incorporation is also seen to be enhanced ≈28% yield a stable emission, while show blue band-edge emission. orientation, separations, characterized Reflection High Energy Electron Diffraction, Field Emission Scanning Microscopy, resolution x-ray diffraction, photoelectron spectroscopy, photoluminescence corroborated understand underlying mechanism. study optimizes conditions grow catalyst-free rods nitrided Si surface, whose emission can tuned from sheer control temperature.